sot223 npn silicon planar medium power darlington transistor issue 3 ? february 1997 features * 2a continuous current * 140 volt v ceo * guaranteed h fe specified up to 1a part marking detail ? fzt600 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 2a power dissipation p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 160 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 140 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 v i e =100 m a collector cut-off current i cbo 0.01 10 m a m a v cb =140v v cb =140v, t amb =100c collector cut-off current i ces 10 m a v ces =140v emitter cut-off current i ebo 0.1 m a v eb =8v collector-emitter saturation voltage v ce(sat) 0.75 0.85 1.1 1.2 v v i c =0.5a, i b =5ma* i c =1a, i b =10ma* base-emitter saturation voltage v be(sat) 1.7 1.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 1.5 1.7 v i c =1a, v ce =5v* static forward current transfer ratio group b h fe 1k 2k 1k 100k i c =50ma, v ce =10v* i c =0.5a, v ce =10v* i c =1a, v ce =10v* 5k 10k 5k 10k 20k 10k 100k i c =50ma, v ce =10v* i c =0.5ma, v ce =10v* i c =1a, v ce =10v* transition frequency f t 150 250 mhz i c =100ma, v ce =10v f=20mhz output capacitance c obo 10 15 mhz v cb =10v, f=1mhz switching times t on 0.75 m s i c =0.5a, v ce =10v i b1 =i b2 =0.5ma t off 2.20 m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device fzt600 3 - 197 c c e b c c e b fzt600 typical characteristics v ce(sat) v i c v be(sat) v i c i c - collector current (amps) h fe v i c h - gai n 0.001 0.01 10 0.1 1 4k 8k 12k 16k 20k v ce =10v group a group b i c - collector current (amps) v be(on) v i c v - ( v olts) 1.2 1.3 1.4 1.5 0.01 0.1 110 1.1 v ce =5v i c - collector current (amps) v - ( v olts) 0 0.60 0.01 0.1 10 1 0.70 0.80 0.90 1.00 i c /i b =100 i c - collector current (amps) v - ( v olts) 1.0 0.01 10 0.1 1 1.2 1.4 1.6 1.8 i c /i b =100 3 - 198
sot223 npn silicon planar medium power darlington transistor issue 3 ? february 1997 features * 2a continuous current * 140 volt v ceo * guaranteed h fe specified up to 1a part marking detail ? fzt600 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 10 v peak pulse current i cm 4a continuous collector current i c 2a power dissipation p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 160 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 140 v i c =10ma* emitter-base breakdown voltage v (br)ebo 10 v i e =100 m a collector cut-off current i cbo 0.01 10 m a m a v cb =140v v cb =140v, t amb =100c collector cut-off current i ces 10 m a v ces =140v emitter cut-off current i ebo 0.1 m a v eb =8v collector-emitter saturation voltage v ce(sat) 0.75 0.85 1.1 1.2 v v i c =0.5a, i b =5ma* i c =1a, i b =10ma* base-emitter saturation voltage v be(sat) 1.7 1.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 1.5 1.7 v i c =1a, v ce =5v* static forward current transfer ratio group b h fe 1k 2k 1k 100k i c =50ma, v ce =10v* i c =0.5a, v ce =10v* i c =1a, v ce =10v* 5k 10k 5k 10k 20k 10k 100k i c =50ma, v ce =10v* i c =0.5ma, v ce =10v* i c =1a, v ce =10v* transition frequency f t 150 250 mhz i c =100ma, v ce =10v f=20mhz output capacitance c obo 10 15 mhz v cb =10v, f=1mhz switching times t on 0.75 m s i c =0.5a, v ce =10v i b1 =i b2 =0.5ma t off 2.20 m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device fzt600 3 - 197 c c e b c c e b fzt600 typical characteristics v ce(sat) v i c v be(sat) v i c i c - collector current (amps) h fe v i c h - gai n 0.001 0.01 10 0.1 1 4k 8k 12k 16k 20k v ce =10v group a group b i c - collector current (amps) v be(on) v i c v - ( v olts) 1.2 1.3 1.4 1.5 0.01 0.1 110 1.1 v ce =5v i c - collector current (amps) v - ( v olts) 0 0.60 0.01 0.1 10 1 0.70 0.80 0.90 1.00 i c /i b =100 i c - collector current (amps) v - ( v olts) 1.0 0.01 10 0.1 1 1.2 1.4 1.6 1.8 i c /i b =100 3 - 198
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